Hamamatsu Photonics releases improved Full Frame Transfer CCD (FFT-CCD) imaging sensors in the S11510 series which offers intense sensitivity in the NIR spectrum. A MEMS configuration can be achieved at the back side of the CCD imager employing Hamamatsu’s laser processing technology generating ultra-high sensitivity for wavelengths exceeding 800 nm in range.
S11510 FFT-CCD Image Sensors
The S11510 exhibits quantum effectiveness of about 40% at 1000nm, avoiding the necessity of a deep depletion design, with increased dark signals. The resolution of S11510 series are in the range of 1024 or 2048 pixels with a measurement of 14m by 14m.
Apart from its intensive IR susceptibility, the S11510 can be deployed as an image sensing unit with a broad operative range in the direction of the height of the sensor and can be attained by binning and is ideal for Raman spectroscopy applications. These sensing units show less etalation limiting Raman applications, where an even stable output is required.
The S11510 version is identical in configuration to the traditional S10420-01 FFT-CCD and both are pin consistent permitting their functions in similar drive systems. This feature enables the enhancement of the NIR susceptibility of the prevailing imaging spectrometer or sensor.