Brewer Science is excited to showcase original, innovative materials at the SPIE Advanced Lithography Conference from February 23-27 in San Jose, CA. Attendees will have the opportunity to learn more about Brewer Science’s latest technology advancements in photolithography.
“We are excited to showcase our latest advancements in photolithography at SPIE,” said Dr. Srikanth Kommu, Executive Director-Semiconductor Business Unit. “SPIE is a great environment to discuss technology and business challenges and trends with our customers, suppliers and partners.”
Join Brewer Science at the following sessions to learn more:
Presentations
Ultrathin film (n, k, t) fitting with physics compliance
Zhimin Zhu
SESSION 4 – Process Control, Resist, Modeling
Date: Wednesday, February 26, 2020
Time: 8:00 – 10:00 AM
Location: Convention Center, Room 210A
Improvement of EUV Si hardmask performance through functionalization
Yichen Liang, Andrea M. Chacko, Samantha Oelklaus, Jennifer Collopy, Veerle Van Driessche, Ivan Sedlacek, Stephen Grannemann, Ming Luo, Douglas Guerrero
Session 10: Underlayers
Date: Wednesday, February 26, 2020
Time: 3:00 – 5:10 PM
Location: Convention Center, Grand Ballroom 220C
Are surfaces of silicon hardmasks adaptive?
Xianggui (Shawn) Ye, Zhimin Zhu, Joyce Lowes, Richard Daugherty, Zhiqiang Fan, James Lamb, Tim Limmer, Srikanth Kommu
Session 10: Underlayers
Date: Wednesday, February 26, 2020
Time: 3:00 – 5:10 PM
Location: Convention Center, Grand Ballroom 220C
Posters
Date: Wednesday, February 26, 2020
Time: 5:30 – 7:30 PM
Location: Convention Center, Hall 2
Superplanarizing material for trench and via fill applications
Runhui Huang
Development of planarizing spin-on carbon material for high-temperature processes
Runhui Huang
Defect mitigation and characterization in silicon hardmask materials
Vineet Alexander
Dr. Kommu continued, “Brewer Science has successfully launched a zero-defect program to significantly improve the quality of materials, enabling the industry to advance next-generation technologies, including EUV.”