Next-generation imaging technology is rapidly extending beyond smartphones, finding applications in intelligent devices, robotics, extended reality (XR), healthcare, CCTV, and various other industries.
The new electrode (CBIC) developed by the researchers can effectively reduce the resistance of the electrode by forming gold nanoparticles inside. Transmission electron microscopy confirms that gold nanoparticles are indeed formed inside the electrode. Image Credit: Korea Institute of Science and Technology
At the core of these advancements are ultra-compact, highly efficient image sensors that convert light signals into electrical signals. These sensors capture and process visual data, enabling precise reconstruction of an object's shape, size, and spatial position.
Currently, most commercial image sensors rely on silicon semiconductors. However, research is actively exploring the potential of two-dimensional (2D) semiconductor nanomaterials as an alternative to silicon. These nanomaterials, composed of atomically thin layers just a few nanometers thick, offer exceptional optical properties and miniaturization potential, making them well-suited for high-performance image sensors.
Despite their promise, achieving optimal performance requires low-resistance electrodes capable of efficiently processing optical signals. Conventional 2D semiconductor-based sensors have struggled with high-resistance electrodes, leading to poor optical signal processing efficiency—one of the major hurdles to commercialization.
A research team led by Dr. Do Kyung Hwang (Post-Silicon Semiconductor Institute, KIST; KU-KIST Graduate School, KIST School) and Dr. Min-Chul Park (Post-Silicon Semiconductor Institute, KIST; Korea University, and Yonsei University) at the Korea Institute of Science and Technology (KIST, President Sang-Rok Oh) has successfully developed an innovative electrode material called Conductive-Bridge Interlayer Contact (CBIC).
This breakthrough has enabled the creation of a 2D semiconductor-based image sensor with significantly improved optical signal efficiency. By incorporating gold nanoparticles within the electrode, the team reduced its resistance, substantially enhancing the performance of 2D semiconductor image sensors. Additionally, they overcame Fermi level pinning, a persistent challenge in traditional electrode materials, further boosting the sensor's optical signal efficiency.
Notably, the team applied this technology to implement integral imaging-based three-dimensional (3D) imaging and glasses-free display technology, inspired by the compound eye structure of dragonflies. Utilizing integral imaging, they successfully captured and reproduced full-color RGB 3D images, enabling the recording and reconstruction of three-dimensional object shapes. These high-performance image sensors have the potential to revolutionize advanced industries, including XR devices, artificial intelligence (AI), and autonomous driving systems.
By overcoming the technical limitations caused by electrode issues in existing 2D semiconductor devices, this research is expected to significantly accelerate the industrialization of next-generation imaging system technologies, which offer advantages in light absorption and miniaturization.
Dr. Do Kyung Hwang, Korea Institute of Science and Technology
Hwang continued, “The developed electrode material is easy to fabricate and scalable to large areas, making it widely applicable to various semiconductor-based optoelectronic devices.”
Dr. Min-Chul Park added, “2D semiconductor-based optoelectronic devices that overcome the challenge of Fermi level pinning will have a significant impact across industries that demand ultra-compact, ultra-high-resolution, and high-performance visual sensors in the future.”
Journal Reference:
Jang, J., et al. (2025) Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices. Nature Electronics. doi.org/10.1038/s41928-025-01339-9