By Kalwinder KaurJul 30 2012
Rochester Institute of Technology received $1.2 M worth grant from the NSF for design, development and testing of a new family of detectors constructed based on Raytheon Visions Systems’ silicon wafer substrates.
The silicon wafer-based next-generation infrared detectors will reduce the cost of developing detectors in addition to improving the existing infrastructure surrounding the semiconductor industry. Silicon wafers are generally used for semiconductor circuits present in the centre of electronic devices.
The availability of existing detector technology, which employs insignificant Cadmium Zinc Telluride wafers, is limited by cost constraints.
Scientists have investigated the application of silicon substitutes for more than a decade in order to discover large infrared detectors. The crystal lattice disparity between infrared materials and silicon has hampered further progress. Increased dark current, higher noise, minimal quantum efficiency and more image persistence are the associated defects.
Atoms in a silicon crystal are tightly packed than those in infrared light-sensitive materials. Defects are created by building infrared material on the silicon. Photo-generated charge indicates phantom signal. False signal is generated by the difference in atomic spacing.
Prototype detector technology was developed by Raytheon based on a process where light-sensitive material was deposited onto silicon substrates and a high vacuum is maintained. The material growth is achieved based on a molecular beam epitaxy.
RIT and Raytheon will engineer arrays of 1,024 by 1,024 pixels and 2,048 by 2,048 pixels, followed by validation in the Center for Detector.
Signals emerging from the faint objects in the universe are not clear due to noise. Using a novel system, Figer's team will measure the performance of detector. In addition, Figer will develop a new light-tight detector enclosure.
With the help of NIF grant, the project will progress to Phase II focused on designing a larger device on the scale of 4,000 by 4,000 pixels. During Phase III and the program’s final phase, RIT and Raytheon will construct an instrument for a bigger telescope.
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