UMC and STMicroelectronics to Devise 65nm BSI CMOS Image Sensor Process

United Microelectronics, a well-established global semiconductor company, has declared a joint effort with STMicroelectronics for backside illumination (BSI)-based 65nm CMOS image sensor technology. After the two companies proved their success in manufacturing ST's front-side illumination (FSI) processes at UMC's 300mm Fab 12i in Singapore, this collaboration was achieved. Developed at Fab12i, the 1.1um px BSI process will also be offered as an open platform to advance future smartphone generations entailing improved resolution and picture quality greater than 10MP.

According to Po-Wen Yen, Senior Vice President of 12-in Operations at UMC, this co-development initiative has enabled the company to establish its relationship with its long-term partner STMicroelectronics. This agreement fosters UMC's open collaboration strategy in providing customer-driven foundry solutions that can cater to the rapidly growing market requirements. The company anticipates expanding its complete technology portfolio with this CIS BSI process.

UMC's expertise in the CIS field features current CIS solutions for 8" as well as 12" manufacturing to meet the varied market needs. Fabrication of the latest 65nm CIS technology will be built on the extended lifetime expectation of the BSI process. Besides catering to the existing applications, the newest process will serve varied purposes within automotive and industrial fields in future. Focused on rapidly developing apps like tablet, smartphone, DSC/DSLR, and high-end surveillance, the 65nm BSI process is being offered via a licensing agreement with ST.

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