Apr 29 2013
SiOnyx Inc, a rapidly growing innovator in advanced imaging technology, today announced the first public demonstration of the XQE™ family of CMOS image sensors at SPIE Defense, Security, and Sensing. XQE image sensors deliver unprecedented performance advantages in infrared imaging with sensitivity enhancements as high as 10x incumbent solutions.
In addition, SiOnyx XQE sensors deliver true nightglow detection capabilities in extreme, low-light conditions. SiOnyx Vice President of Engineering and CTO, Dr. Homayoon Haddad, will present the unique performance capabilities of the XQE sensors and discuss the technical specifications behind this achievement.
“SiOnyx, in collaboration with our foundry partners, has created an entirely new category of CMOS image sensor,” said Dr. Haddad. “Extraordinary sensitivity enhancements combined with low cost, low noise silicon manufacturing delivers stunning results.”
Infrared (IR) sensitivity is critical in many existing and emerging mass-market applications, including biometrics, eye tracking, natural human interface (i.e. gesture UI) and surveillance. In surveillance, the enhanced IR sensitivity provided by SiOnyx XQE sensors take advantage of the naturally occurring IR 'nightglow' to enable imaging under conditions that normally require very expensive image-intensified nightvision equipment. In addition, XQE sensors deliver 1064nm laser detection for laser See Spot designation and targeting applications of smart munitions in a single focal plane solution.
“SiOnyx XQE sensors provide unparalleled cost-effective, digital nightvision solutions for the fully networked soldier,” said Dr. Martin Pralle, Vice President of Government Programs for SiOnyx. “Digital nightvision lets the warfighter transmit battlefield imagery to central command in real time, enhancing the US military’s situational awareness.”
The XQE sensor family all share the benefits of ultra-low read noise for extended low light imaging and 72dB of native dynamic range. Additionally, all XQE sensors have on-chip HDR features that allow up to 120dB dynamic range capability. XQE sensors are fabricated with a standard CMOS process that offers low power, low dark current, and no sensor cooling requirements.
SiOnyx XQE image sensors are sampling in Q2 2013 to customers interested in evaluating the use of XQE image sensors in next generation imaging platforms.
For more information and sample video imagery visit website.