Apr 29 2014
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications.
Both power amplifiers can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications. (Photo: Business Wire)
The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41dBm, a large signal gain of 21dB and 40% power added efficiency. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-Band applications.
The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41dBm and a small signal gain of 36dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip provides 40% power added efficiency and offers very high gain which eliminates the need for a driver amplifier in customers’ circuits.
“The combination of high power, high gain and excellent power added efficiency performance, makes these two power amplifiers very attractive solutions for high power X-Band applications,” said Paul Beasly, Product Manager. “Furthermore, the versatile biasing options and wide-band operation make the devices ideal for a wide range of X-band applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links.”