Diodes Introduces Micro-Power 8-Bit Resolution Hall Effect Sensors for Contactless Switching

Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced a family of micro-power 8-bit resolution Hall effect sensors for contactless switching in portable consumer electronic products, domestic appliances and industrial equipment.

Operating over a supply range of 1.6V to 3.6V and a magnetic range of ±400G, the sensors allow the operating mode and sampling rate to minimize current consumption down to micro-power levels. The AH8500 and the higher accuracy AH8501, which both feature an enable pin, draw a current of just 9μA in sleep mode (default mode). The devices achieve a typical current consumption of only 12μA at 20Hz and 1.16mA at the maximum 7.14kHz sample rate.

Also included in the product family are the AH8502 and AH8503, which feature a control pin, and a default-mode sampling rate of 24Hz. These two devices consume 13μA and allow the control pin to increase the sampling rate up to 7.14kHz, with a current consumption of 1.16mA.

The higher accuracy, gain trimmed AH8501 and AH8503 devices help minimize any sample-to-sample variation and the need for any sensor calibration. The AH8501 and AH8503 have a sensitivity accuracy of 3% at room temperature and a null offset below 1% of supply voltage.

This family of linear Hall effect sensors feature internal ADC and DAC and have a typical span linearity greater than 99.7% ensuring high linearity with the external magnetic field. A low input-referred noise characteristic of less than 0.36G helps minimize output fluctuation.

The devices’ high sensitivity over its full operating range, typically 2.25mV/G at 1.6V to 4.12mV/G at 3.6V, enables designers to either boost field detection ranges or make use of weaker, lower cost magnets.

With their chopper-stabilized architecture and advanced low temperature coefficient, these sensors help to minimize output offsets, drift and internal stress effects, ensuring greater stability and robustness over the full -40ºC to +85ºC operating temperature range. These devices also feature a high ESD of 6kV.

Packaged in the small footprint, low profile U-DFN2020-6, this family of devices is suitable for a variety of proximity, position, and travel and level detection applications. Further information is available at www.diodes.com.

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